Not Recommended for New Design
[ Alternative : FKV550N]
EKV550
Package:TO220-3L
Silicon N-channel MOSFET
Design Support
Related Documents
Features
-
・Low gate input capacitance
・Low gate charge
・High speed switching
Application
-
・For DC-DC converters
Specifications
VDS | 50 V |
---|---|
VGSS | ±20 V |
ID (-) | -50 A |
ID (+) | 50 A |
ID(PULSE) | A |
PD | 85.00 W |
VTH (min.) | 3.00 V |
VTH (max.) | 4.20 V |
Ciss | 2000 pF |
Crss | 500 pF |
RDS(ON) (typ.) | 12.0 mΩ |
RDS(ON) (max.) | 15.0 mΩ |
Polarity | Nch |
RDS(ON) (typ.) (VGS=4.5V) | mΩ |
RDS(ON) (max.) (VGS=4.5V) | mΩ |
Coss | pF |
Qg | nC |
Qg(VGS=4.5) | nC |
trr1 | ns |
Package Weight (Typ.) | g |
Physical Dimensions
Questions or Comments?
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